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x28vc256 1 ?xicor, inc. 1991, 1995 patents pending characteristics subject to change without notice 3869-2.6 4/2/96 t4/c4/d0 ns 5 volt, byte alterable e 2 prom features ? access time: 45ns ? simple byte and page write single 5v supply no external high voltages or v pp control circuits self-timed no erase before write no complex programming algorithms no overerase problem ? low power cmos: active: 80ma standby: 10ma ? software data protection protects data against system level inadvertent writes ? high speed page write capability ? highly reliable direct write ? cell endurance: 100,000 write cycles data retention: 100 years ? early end of write detection data polling toggle bit polling description the x28vc256 is a second generation high perfor- mance cmos 32k x 8 e 2 prom. it is fabricated with xicors proprietary, textured poly floating gate tech- nology, providing a highly reliable 5 volt only nonvolatile memory. the x28vc256 supports a 128-byte page write opera- tion, effectively providing a 24 m s/byte write cycle and enabling the entire memory to be typically rewritten in less than 0.8 seconds. the x28vc256 also features data polling and toggle bit polling, two methods of providing early end of write detection. the x28vc256 also supports the jedec standard software data pro- tection feature for protecting against inadvertent writes during power-up and power-down. endurance for the x28vc256 is specified as a minimum 100,000 write cycles per byte and an inherent data retention of 100 years. 256k x28vc256 32k x 8 bit pin configuration a14 a 12 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 i/o 0 i/o 1 i/o 2 v ss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 v cc we a 13 a 8 a 9 a 11 oe a 10 ce i/o 7 i/o 6 i/o 5 i/0 4 i/o 3 x28vc256 3869 fhd f02 plastic dip cerdip flat pack soic 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 x28vc256 a 3 a 4 a 5 a 6 a 7 a 12 a 14 nc v cc nc we a 13 a 8 a 9 a 11 oe 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 a 2 a 1 a 0 i/o 0 i/o 1 i/o 2 nc v ss nc i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 ce a 10 tsop a 6 a 5 a 4 a 3 a 2 a 1 a 0 nc i/o 0 a 8 a 9 a 11 nc oe a 10 ce i/o 7 i/o 6 4321323130 14 15 16 17 18 19 20 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 x28vc256 a 7 a 12 a 14 nc v cc we a 13 i/o 1 i/o 2 v ss nc i/o 3 i/o 4 i/o 5 lcc plcc 3869 fhd f03 3869 ill f22
x28vc256 2 pin descriptions addresses (a 0 Ca 14 ) the address inputs select an 8-bit memory location during a read or write operation. chip enable ( ce ) the chip enable input must be low to enable all read/ write operations. when ce is high, power consumption is reduced. output enable ( oe ) the output enable input controls the data output buffers and is used to initiate read operations. data in/data out (i/o 0 Ci/o 7 ) data is written to or read from the x28vc256 through the i/o pins. write enable ( we ) the write enable input controls the writing of data to the x28vc256. x buffers latches and decoder i/o buffers and latches 3869 fhd f01 y buffers latches and decoder control logic and timing 256k-bit e 2 prom array i/o 0 Ci/o 7 data inputs/outputs ce oe v cc v ss a 0 Ca 14 address inputs we 3869 fhd f01 functional diagram pin names symbol description a 0 Ca 14 address inputs i/o 0 Ci/o 7 data input/output we write enable ce chip enable oe output enable v cc +5v v ss ground nc no connect 3869 pgm t01 pga 3869 fhd f04 pin configuration 11 i/o 0 10 a 0 14 v ss 9 a 1 8 a 2 7 a 3 6 a 4 5 a 5 2 a 12 28 v cc 12 i/o 1 13 i/o 2 15 i/o 3 4 a 6 3 a 7 1 16 i/o 4 20 ce 22 oe 24 a 9 17 i/o 5 27 we 19 i/o 7 21 a 10 23 a 11 25 a 8 18 i/o 6 26 a 13 x28vc256 (bottom view) a 14
x28vc256 3 device operation read read operations are initiated by both oe and ce low. the read operation is terminated by either ce or oe returning high. this two line control architecture elimi- nates bus contention in a system environment. the data bus will be in a high impedance state when either oe or ce is high. write write operations are initiated when both ce and we are low and oe is high. the x28vc256 supports both a ce and we controlled write cycle. that is, the address is latched by the falling edge of either ce or we , whichever occurs last. similarly, the data is latched internally by the rising edge of either ce or we , whichever occurs first. a byte write operation, once initiated, will automatically continue to completion, typi- cally within 3ms. page write operation the page write feature of the x28vc256 allows the entire memory to be written in typically 0.8 seconds. page write allows up to one hundred twenty-eight bytes of data to be consecutively written to the x28vc256 prior to the commencement of the internal programming cycle. the host can fetch data from another device within the system during a page write operation (change the source address), but the page address (a 7 through a 14 ) for each subsequent valid write cycle to the part during this operation must be the same as the initial page address. the page write mode can be initiated during any write operation. following the initial byte write cycle, the host can write an additional one to one hundred twenty- seven bytes in the same manner as the first byte was written. each successive byte load cycle, started by the we high to low transition, must begin within 100 m s of the falling edge of the preceding we . if a subsequent we high to low transition is not detected within 100 m s, the internal automatic programming cycle will commence. there is no page write window limitation. effectively the page write window is infinitely wide, so long as the host continues to access the device within the byte load cycle time of 100 m s. write operation status bits the x28vc256 provides the user two write operation status bits. these can be used to optimize a system write cycle time. the status bits are mapped onto the i/o bus as shown in figure 1. figure 1. status bit assignment 3869 fhd f11 data polling (i/o 7 ) the x28vc256 features data polling as a method to indicate to the host system that the byte write or page write cycle has completed. data polling allows a simple bit test operation to determine the status of the x28vc256, eliminating additional interrupt inputs or external hardware. during the internal programming cycle, any attempt to read the last byte written will produce the complement of that data on i/o 7 (i.e., write data = 0xxx xxxx, read data = 1xxx xxxx). once the programming cycle is complete, i/o 7 will reflect true data. toggle bit (i/o 6 ) the x28vc256 also provides another method for deter- mining when the internal write cycle is complete. during the internal programming cycle i/o 6 will toggle from high to low and low to high on subsequent at- tempts to read the device. when the internal cycle is complete the toggling will cease and the device will be accessible for additional read and write operations. 5 tb dp 43210 i/o reserved toggle bit data polling
x28vc256 4 data polling i/o 7 figure 2. data polling bus sequence 3869 fhd f12 figure 3. data polling software flow data polling can effectively halve the time for writing to the x28vc256. the timing diagram in figure 2 illus- trates the sequence of events on the bus. the software flow diagram in figure 3 illustrates one method of implementing the routine. 3869 fhd f13 write data save last data and address read last address io 7 compare? x28vc256 ready no yes writes complete? no yes ce oe we i/o 7 x28vc256 ready last write high z v ol v ih a 0 Ca 14 an an an an an an v oh an
x28vc256 5 the toggle bit i/o 6 figure 4. toggle bit bus sequence 3869 fhd f14 figure 5. toggle bit software flow the toggle bit can eliminate the software housekeeping chore of saving and fetching the last address and data written to a device in order to implement data polling. this can be especially helpful in an array comprised of multiple x28vc256 memories that is frequently up- dated. the timing diagram in figure 4 illustrates the sequence of events on the bus. the software flow diagram in figure 5 illustrates a method for polling the toggle bit. 3869 fhd f15 load accum from addr n compare accum with addr n x28vc256 ready compare ok? no yes last write yes ce oe we i/o 6 x28vc256 ready v oh v ol last write high z * i/o 6 beginning and ending state of i/o 6 will vary. * *
x28vc256 6 circuits by employing the software data protection fea- ture. the internal software data protection circuit is enabled after the first write operation utilizing the soft- ware algorithm. this circuit is nonvolatile and will remain set for the life of the device unless the reset command is issued. once the software protection is enabled, the x28vc256 is also protected from inadvertent and accidental writes in the powered-up state. that is, the software algorithm must be issued prior to writing additional data to the device. software algorithm selecting the software data protection mode requires the host system to precede data write operations by a series of three write operations to three specific ad- dresses. refer to figure 6 and 7 for the sequence. the three-byte sequence opens the page write window enabling the host to write from one to one hundred twenty-eight bytes of data. once the page load cycle has been completed, the device will automatically be re- turned to the data protected state. hardware data protection the x28vc256 provides two hardware features that protect nonvolatile data from inadvertent writes. ? default v cc senseall write functions are inhibited when v cc is 3.5v typically. ? write inhibitholding either oe low, we high, or ce high will prevent an inadvertent write cycle during power-up and power-down, maintaining data integrity. software data protection the x28vc256 offers a software controlled data protec- tion feature. the x28vc256 is shipped from xicor with the software data protection not enabled; that is, the device will be in the standard operating mode. in this mode data should be protected during power-up/down operations through the use of external circuits. the host would then have open read and write access of the device once v cc was stable. the x28vc256 can be automatically protected during power-up and power-down without the need for external
x28vc256 7 software data protection figure 6. timing sequencebyte or page write 3869 fhd f16 figure 7. write sequence for software data protection regardless of whether the device has previously been protected or not, once the software data protection algorithm is used and data has been written, the x28vc256 will automatically disable further writes un- less another command is issued to cancel it. if no further commands are issued the x28vc256 will be write protected during power-down and after any subsequent power-up. note: once initiated, the sequence of write operations should not be interrupted. 3869 fhd f17 ce we (v cc ) write protected v cc 0v data address aa 5555 55 2aaa a0 5555 t blc max writes ok byte or page t wc t blc max write last byte to last address write data 55 to address 2aaa write data a0 to address 5555 write data xx to any address after t wc re-enters data protected state write data aa to address 5555 byte/page load enabled optional byte or page write allowed
x28vc256 8 figure 9. write sequence for resetting software data protection resetting software data protection figure 8. reset software data protection timing sequence 3869 fhd f18 in the event the user wants to deactivate the software data protection feature for testing or reprogramming in an e 2 prom programmer, the following six step algo- rithm will reset the internal protection circuit. after t wc , the x28vc256 will be in standard operating mode. note: once initiated, the sequence of write operations should not be interrupted. 3869 fhd f19 ce we standard operating mode v cc data address aa 5555 55 2aaa 80 5555 t wc aa 5555 55 2aaa 20 5555 write data 55 to address 2aaa write data 55 to address 2aaa write data 80 to address 5555 write data aa to address 5555 write data 20 to address 5555 write data aa to address 5555 after t wc , re-enters unprotected state
x28vc256 9 prime concern. enabling ce will cause transient current spikes. the magnitude of these spikes is dependent on the output capacitive loading of the l/os. therefore, the larger the array sharing a common bus, the larger the transient spikes. the voltage peaks associated with the current transients can be suppressed by the proper selection and placement of decoupling capacitors. as a minimum, it is recommended that a 0.1 m f high fre- quency ceramic capacitor be used between v cc and v ss at each device. depending on the size of the array, the value of the capacitor may have to be larger. in addition, it is recommended that a 4.7 m f electrolytic bulk capacitor be placed between v cc and v ss for each eight devices employed in the array. this bulk capacitor is employed to overcome the voltage droop caused by the inductive effects of the pc board traces. system considerations because the x28vc256 is frequently used in large memory arrays it is provided with a two line control architecture for both read and write operations. proper usage can provide the lowest possible power dissipation and eliminate the possibility of contention where mul- tiple i/o pins share the same bus. to gain the most benefit it is recommended that ce be decoded from the address bus and be used as the primary device selection input. both oe and we would then be common among all devices in the array. for a read operation this assures that all deselected devices are in their standby mode and that only the selected device(s) is outputting data on the bus. because the x28vc256 has two power modes, standby and active, proper decoupling of the memory array is of
x28vc256 10 *comment stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and the functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating condi- tions for extended periods may affect device reliability. absolute maximum ratings* temperature under bias x28vc256 .................................. C10 c to +85 c x28vc256i, x28vc256m .......... C65 c to +135 c storage temperature ....................... C65 c to +150 c voltage on any pin with respect to v ss .................................. C1v to +7v d.c. output current ........................................... 10ma lead temperature (soldering, 10 seconds) ...... 300 c recommended operating conditions temperature min. max. commercial 0 c +70 c industrial C40 c +85 c military C55 c +125 c 3869 pgm t02.1 supply voltage limits x28vc256 5v 10% 3869 pgm t03.1 d.c. operating characteristics (over recommended operating conditions unless otherwise specified.) limits symbol parameter min. typ. (1) max. units test conditions i cc v cc active current 30 80 ma ce = oe = v il , we = v ih , all i/os = open, address inputs = 0.4v/2.4v levels @ f = 10mhz i sb v cc standby current 10 25 ma ce = v ih , oe = v il , all i/os = open, other inputs = v ih i li input leakage current 10 m av in = v ss to v cc i lo output leakage current 10 m av out = v ss to v cc , ce = v ih v ll (2) input low voltage C1 0.8 v v ih (2) input high voltage 2 v cc + 1 v v ol output low voltage 0.4 v i ol = 6ma v oh output high voltage 2.4 v i oh = C4ma 3869 pgm t04.2 notes: (1) typical values are for t a = 25 c and nominal supply voltage. (2) v il min. and v ih max. are for reference only and are not tested.
x28vc256 11 power-up timing symbol parameter max. units t pur (3) power-up to read 100 m s t puw (3) power-up to write 5 ms 3869 pgm t05 capacitance t a = +25 c, f = 1mh z , v cc = 5v. symbol test max. units conditions c i/o (3) input/output capacitance 10 pf v i/o = 0v c in (3) input capacitance 6 pf v in = 0v 3869 pgm t06.1 endurance and data retention parameter min. max. units endurance 100,000 cycles data retention 100 years 3869 pgm t07.3 mode selection ce oe we mode i/o power l l h read d out active l h l write d in active h x x standby and write inhibit high z standby x l x write inhibit x x h write inhibit 3869 pgm t09 a.c. conditions of test input pulse levels 0v to 3v input rise and fall times 5ns input and output timing levels 1.5v 3869 pgm t08.1 equivalent a.c. load circuit symbol table waveform inputs outputs must be steady will be steady may change from low to high will change from low to high may change from high to low will change from high to low don? care: changes allowed changing: state not known n/a center line is high impedance note: (3) this parameter is periodically sampled and not 100% tested. 3869 fhd f20.3 5v 1.92k w 30pf output 1.37k w
x28vc256 12 a.c. characteristics (over the recommended operating conditions, unless otherwise specified.) read cycle limits x28vc256-45 x28vc256-55 x28vc256-70 x28vc256-90 C40 c to 85 c C55 c to 125 c C55 c to 125 c C55 c to 125 c symbol parameter min. max. min. max. min. max. min. max. units t rc read cycle time 45 55 70 90 ns t ce chip enable access time 45 55 70 90 ns t aa address access time 45 55 70 90 ns t oe output enable access time 30 30 35 40 ns t lz (4) ce low to active output 0 0 0 0 ns t olz (4) oe low to active output 0 0 0 0 ns t hz (4) ce high to high z output 30 30 35 40 ns t ohz (4) oe high to high z output 30 30 35 40 ns t oh output hold from address change 0 0 0 0 ns 3869 pgm t10.1 read cycle 3869 fhd f05 notes: (4) t lz min., t hz , t olz min. and t ohz are periodically sampled and not 100% tested, t hz and t ohz are measured, with cl = 5pf, from the point whin ce , oe return high (whichever occurs first) to the time when the outputs are no longer driven. t ce t rc address ce oe we data valid data valid t oe t lz t olz t oh t aa t hz t ohz data i/o v ih high z
x28vc256 13 write cycle limits symbol parameter min. typ. (5) max. units t wc (6) write cycle time 3 5 ms t as address setup time 0 ns t ah address hold time 50 ns t cs write setup time 0 ns t ch write hold time 0 ns t cw ce pulse width 50 ns t oes oe high setup time 0 ns t oeh oe high hold time 0 ns t wp we pulse width 50 ns t wph (7) we high recovery (page write only) 50 ns t dv data valid 1 m s t ds data setup 50 ns t dh data hold 0 ns t dw (7) delay to next write after polling is true 10 m s t blc byte load cycle 0.150 100 m s 3869 pgm t11.2 we controlled write cycle 3869 fhd f06 notes: (5) typical values are for t a = 25 c and nominal supply voltage. (6) t wc is the minimum cycle time to be allowed from the system perspective unless polling techniques are used. it is the maximum time the device requires to automatically complete the internal write operation. (7) t wph and t dw are periodically sampled and not 100% tested. address t as t wc t ah t oes t ds t dh t oeh ce we oe data in data out high z data valid t cs t ch t wp
x28vc256 14 ce controlled write cycle 3869 fhd f07 page write cycle 3869 fhd f08 notes: (8) between successive byte writes within a page write operation, oe can be strobed low: e.g. this can be done with ce and we high to fetch data from another memory device within the system for the next write; or with we high and ce low effectively performing a polling operation. (9) the timings shown above are unique to page write operations. individual byte load operations within the page write must conf orm to either the ce or we controlled write cycle timing. address t as t wc t ah t oes t cs t ds t dh t ch ce we oe data in data out high z data valid t cw t oeh we oe (8) byte 0 byte 1 byte 2 byte n byte n+1 byte n+2 t wp t wph t blc t wc ce address* (9) i/o *for each successive write within the page write operation, a 7 Ca 14 should be the same or writes to an unknown address could occur. last byte
x28vc256 15 data polling timing diagram (10) 3869 fhd f09 toggle bit timing diagram (10) ce oe we i/o 6 t oes t dw t wc t oeh high z * * * i/o 6 beginning and ending state will vary, depending upon actual t wc address a n d in =x d out =x d out =x t wc t oeh t oes a n a n ce we oe i/o 7 t dw 3869 fhd f10 note: (10) polling operations are by definition read cycles and are therefore subject to read cycle timings.
x28vc256 16 packaging information 0.020 (0.51) 0.016 (0.41) 0.150 (3.81) 0.125 (3.17) 0.610 (15.49) 0.590 (14.99) 0.110 (2.79) 0.090 (2.29) 1.460 (37.08) 1.400 (35.56) 1.300 (33.02) ref. pin 1 index 0.160 (4.06) 0.125 (3.17) 0.030 (0.76) 0.015 (0.38) 3926 fhd f04 pin 1 seating plane 0.062 (1.57) 0.050 (1.27) 0.550 (13.97) 0.510 (12.95) 0.085 (2.16) 0.040 (1.02) 0 15 28-lead plastic dual in-line package type p note: all dimensions in inches (in parentheses in millimeters) typ. 0.010 (0.25)
x28vc256 17 0.620 (15.75) 0.590 (14.99) typ. 0.614 (15.60) 0.110 (2.79) 0.090 (2.29) typ. 0.100 (2.54) 0.023 (0.58) 0.014 (0.36) typ. 0.018 (0.46) 0.060 (1.52) 0.015 (0.38) 3926 fhd f08 pin 1 0.200 (5.08) 0.125 (3.18) 0.065 (1.65) 0.038 (0.97) typ. 0.055 (1.40) 0.610 (15.49) 0.500 (12.70) 0.100 (2.54) max. 0.015 (0.38) 0.008 (0.20) 0 15 28-lead hermetic dual in-line package type d note: all dimensions in inches (in parentheses in millimeters) 1.490 (37.85) max. seating plane 0.005 (0.127) min. 0.232 (5.90) max. 0.150 (3.81) min. packaging information
x28vc256 18 0.021 (0.53) 0.013 (0.33) 0.420 (10.67) 0.050 (1.27) typ. typ. 0.017 (0.43) 0.045 (1.14) x 45 0.300 (7.62) ref. 0.453 (11.51) 0.447 (11.35) typ. 0.450 (11.43) 0.495 (12.57) 0.485 (12.32) typ. 0.490 (12.45) pin 1 0.400 (10.16) ref. 0.553 (14.05) 0.547 (13.89) typ. 0.550 (13.97) 0.595 (15.11) 0.585 (14.86) typ. 0.590 (14.99) 3 typ. 0.048 (1.22) 0.042 (1.07) 0.140 (3.56) 0.100 (2.45) typ. 0.136 (3.45) 0.095 (2.41) 0.060 (1.52) 0.015 (0.38) seating plane 0.004 lead co C planarity 3926 fhd f13 32-lead plastic leaded chip carrier package type j notes: 1. all dimensions in inches (in parentheses in millimeters) 2. dimensions with no tolerance for reference only 3926 fhd f13 packaging information
x28vc256 19 0.2980 (7.5692) 0.2920 (7.4168) 0.4160 (10.5664) 0.3980 (10.1092) 0.0192 (0.4877) 0.0138 (0.3505) 0.0160 (0.4064) 0.0100 (0.2540) 0.050 (1.270) bsc 0.7080 (17.9832) 0.7020 (17.8308) 0.0110 (0.2794) 0.0040 (0.1016) 0.1040 (2.6416) 0.0940 (2.3876) 0.0350 (0.8890) 0.0160 (0.4064) 0.0125 (0.3175) 0.0090 (0.2311) 0 C 8 x 45 3926 fhd f17 28-lead plastic small outline gull wing package type s notes: 1. all dimensions in inches (in parentheses in millimeters) 2. formed lead shall be planar with respect to one another within 0.004 inches 3. back ejector pin marked korea 4. controlling dimension: inches (mm) seating plane base plane packaging information
x28vc256 20 0.150 (3.81) bsc 0.458 (11.63) CC 0.458 (11.63) 0.442 (11.22) pin 1 3926 fhd f14 0.020 (0.51) x 45 ref. 0.095 (2.41) 0.075 (1.91) 0.022 (0.56) 0.006 (0.15) 0.055 (1.39) 0.045 (1.14) typ. (4) plcs. 0.040 (1.02) x 45 ref. typ. (3) plcs. 0.050 (1.27) bsc 0.028 (0.71) 0.022 (0.56) (32) plcs. 0.200 (5.08) bsc 0.558 (14.17) CC 0.088 (2.24) 0.050 (1.27) 0.120 (3.05) 0.060 (1.52) pin 1 index corner 32-pad ceramic leadless chip carrier package type e note: 1. all dimensions in inches (in parentheses in millimeters) 2. tolerance: 1% nlt 0.005 (0.127) 0.300 (7.62) bsc 0.015 (0.38) min. 0.400 (10.16) bsc 0.560 (14.22) 0.540 (13.71) dia. 0.015 (0.38) 0.003 (0.08) packaging information
x28vc256 21 0.561 (14.25) 0.541 (13.75) 3926 fhd f15 28-lead ceramic pin grid array package type k note: all dimensions in inches (in parentheses in millimeters) 0.020 (0.51) 0.016 (0.41) 12 13 15 17 18 11 10 14 16 19 9 8 20 21 7 6 22 23 5 2 28 24 25 4 3 1 27 26 typ. 0.100 (2.54) all leads 0.080 (2.03) 0.070 (1.78) 4 corners pin 1 index 0.660 (16.76) 0.640 (16.26) 0.110 (2.79) 0.080 (2.03) 0.072 (1.83) 0.061 (1.55) 0.185 (4.70) 0.175 (4.44) 0.050 (1.27) 0.008 (0.20) a a a a note: leads 4,12,18 & 26 0.080 (2.03) 0.070 (1.78) packaging information
x28vc256 22 28-lead ceramic flat pack type f 3926 fhd f16 note: all dimensions in inches (in parentheses in millimeters) 0.740 (18.80) max. 0.019 (0.48) 0.015 (0.38) 0.050 (1.27) bsc 0.045 (1.14) max. pin 1 index 128 0.130 (3.30) 0.090 (2.29) 0.045 (1.14) 0.025 (0.66) 0.180 (4.57) min. 0.006 (0.15) 0.003 (0.08) 0.030 (0.76) min. 0.370 (9.40) 0.250 (6.35) typ. 0.300 2 plcs. 0.440 (11.18) max. packaging information
x28vc256 23 packaging information 3926 ill f38.1 8.02 (0.315) 7.98 (0.314) 1.18 (0.046) 1.02 (0.040) 0.17 (0.007) 0.03 (0.001) 0.26 (0.010) 0.14 (0.006) 0.50 (0.0197) bsc 0.58 (0.023) 0.42 (0.017) 14.15 (0.557) 13.83 (0.544) 12.50 (0.492) 12.30 (0.484) pin #1 ident. o 0.76 (0.03) seating plane see note 2 see note 2 0.50 ?0.04 (0.0197 ?0.0016) 0.30 ?0.05 (0.012 ?0.002) 14.80 ?0.05 (0.583 ?0.002) 1.30 ?0.05 (0.051 ?0.002) 0.17 (0.007) 0.03 (0.001) typical 32 places 15 eq. spc. 0.50 ?0.04 0.0197 ?0.016 = 7.50 ?0.06 (0.295 ?0.0024) overall tol. non-cumulative solder pads footprint note: 1. all dimensions are shown in millimeters (inches in parentheses). 32-lead thin small outline package (tsop) type t
x28vc256 24 limited warranty devices sold by xicor, inc. are covered by the warranty and patent indemnification provisions appearing in its terms of sale on ly. xicor, inc. makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the descr ibed devices from patent infringement. xicor, inc. makes no warranty of merchantability or fitness for any purpose. xicor, inc. reserves the right to discontinue prod uction and change specifications and prices at any time and without notice. xicor, inc. assumes no responsibility for the use of any circuitry other than circuitry embodied in a xicor, inc. product. no o ther circuits, patents, licenses are implied. u.s. patents xicor products are covered by one or more of the following u.s. patents: 4,263,664; 4,274,012; 4,300,212; 4,314,265; 4,326,134; 4,393,481; 4,404,475; 4,450,402; 4,486,769; 4,488,060; 4,520,461; 4,533,846; 4,599,706; 4,617,652; 4,668,932; 4,752,912; 4,829, 482; 4,874, 967; 4,88 3, 976. foreign patents and additional patents pending. life related policy in situations where semiconductor component failure may endanger life, system designers using this product should design the sy stem with appropriate error detection and correction, redundancy and back-up features to prevent such an occurrence. xicor's products are not authorized for use in critical components in life support devices or systems. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) sup port or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expe cted to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ordering information device access time C45 = 45ns C55 = 55ns C70 = 70ns C90 = 90ns temperature range blank = commercial = 0 c to +70 c i = industrial = C40 c to +85 c m = military = C55 c to +125 c mb = mil-std-883 package p = 28-lead plastic dip d = 28-lead cerdip j = 32-lead plcc s = 28-lead plastic soic e = 32-pad lcc k = 28-lead pin grid array f = 28-lead flat pack t = 32-lead tsop x28vc256 x x -x

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